Laboratoire des Sciences des Procédés et des Matériaux - UPR 3407
99 a.v Jean-Baptiste Clément 93430 Villetaneuse

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Audrey VALENTIN

Maîtresse de Conférences
DMC

audrey.valentin[at]lspm.cnrs.fr@-Code to remove to avoid SPAM-
+33 (0) 1 49 40 34 18

Article dans une revue

2022

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Audrey Valentin, Ovidiu Brinza, Samir Farhat, Jocelyn Achard, Fabien Bénédic. 3D kinetic Monte-Carlo simulations of diamond growth on (1 0 0) surfaces. Diamond and Related Materials, 2022, pp.108865. ⟨10.1016/j.diamond.2022.108865⟩. ⟨hal-03544300⟩
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https://hal-cnrs.archives-ouvertes.fr/hal-03544300/file/ArticleICDCM2021preprint.pdf BibTex

2019

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Mary de Feudis, V. Mille, A. Valentin, O. Brinza, Alexandre Tallaire, et al.. Ohmic graphite-metal contacts on oxygen-terminated lightly boron-doped CVD monocrystalline diamond. Diamond and Related Materials, 2019, 92, pp.18-24. ⟨10.1016/j.diamond.2018.12.009⟩. ⟨hal-02346255⟩
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2018

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Audrey Valentin, Mary de Feudis, Ovidiu Brinza, André Tardieu, Ludovic William, et al.. Characteristics of He Ion Implanted Layers on Single-Crystal Diamond. physica status solidi (a), 2018, 215 (22), pp.1800264. ⟨10.1002/pssa.201800264⟩. ⟨hal-02346258⟩
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2016

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Marie-Amandine Pinault-Thaury, A. Tallaire, A. Valentin, V. Mille, L. William, et al.. Growth of thick and heavily boron-doped (113)-oriented CVD diamond films. Diamond and Related Materials, 2016, 66, pp.61-66. ⟨10.1016/j.diamond.2016.03.020⟩. ⟨hal-02441087⟩
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2015

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Audrey Valentin, André Tardieu, Vianney Mille, Alexandre Tallaire, Jocelyn Achard, et al.. Polarization effect on time-of-flight measurements performed on a CVD diamond single crystal. physica status solidi (a), 2015, 212 (11), pp.2636-2640. ⟨10.1002/pssa.201532205⟩. ⟨hal-02492758⟩
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2012

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Audrey Valentin, M. Raine, M. Gaillardin, P. Paillet. Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for protons and heavy ions in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 287, pp.124-129. ⟨10.1016/j.nimb.2012.06.007⟩. ⟨hal-03440051⟩
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Audrey Valentin, M. Raine, J.-E. Sauvestre, M. Gaillardin, P. Paillet. Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 288, pp.66-73. ⟨10.1016/j.nimb.2012.07.028⟩. ⟨hal-03440042⟩
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Audrey Valentin, M. Raine, M. Gaillardin, P. Paillet. Improved Simulation of Ion Track Structures Using New Geant4 Models—Impact on the Modeling of Advanced Technologies Response. IEEE Transactions on Nuclear Science, 2012, 59 (6), pp.2697-2703. ⟨10.1109/TNS.2012.2220783⟩. ⟨hal-03440054⟩
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2011

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Audrey Valentin, F. Mazzamuto, J. Saint-Martin, C. Chassat, P. Dollfus. Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study. Journal of Applied Physics, 2011, 109 (6), pp.064516. ⟨10.1063/1.3552293⟩. ⟨hal-03440047⟩
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Audrey Valentin, Vincent Talbo, Sylvie Galdin-Retailleau, Philippe Dollfus. Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors. IEEE Transactions on Electron Devices, 2011, 58 (10), pp.3286-3293. ⟨10.1109/TED.2011.2161611⟩. ⟨hal-03440056⟩
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2009

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Audrey Valentin, Sylvie Galdin-Retailleau, Philippe Dollfus. Phonon effect on single-electron transport in two-dot semiconductor devices. Journal of Applied Physics, 2009, 106 (4), pp.044501. ⟨10.1063/1.3186035⟩. ⟨hal-03440059⟩
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2008

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D. Querlioz, Y. Apertet, A. Valentin, K. Huet, A. Bournel, et al.. Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder. Applied Physics Letters, 2008, 92 (4), pp.042108. ⟨10.1063/1.2838354⟩. ⟨hal-02452618⟩
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Audrey Valentin, Johann Sée, Sylvie Galdin-Retailleau, Philippe Dollfus. Study of phonon modes in silicon nanocrystals using the adiabatic bond charge model. Journal of Physics: Condensed Matter, 2008, 20 (14), pp.145213. ⟨10.1088/0953-8984/20/14/145213⟩. ⟨hal-03440045⟩
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2007

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Audrey Valentin, J Sée, S Galdin-Retailleau, P Dollfus. Phonon dispersion in silicon nanocrystals. Journal of Physics: Conference Series, 2007, 92, pp.012048. ⟨10.1088/1742-6596/92/1/012048⟩. ⟨hal-03440066⟩
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Communication dans un congrès

2021

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Audrey Valentin, Ovidiu Brinza, Samir Farhat, Lahcene Mehmel, Fabien J Bénédic, et al.. Multi-scale simulation of monocrystalline diamond growth on microstructured substrates. ICDCM 31, Sep 2021, En ligne, France. ⟨hal-03578230⟩
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2019

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Audrey Valentin, Ovidiu Brinza, Vianney Mille, Riadh Issaoui, Mary de Feudis, et al.. Graphitic layers formed on single crystal diamond for ohmic contact optimization. French-Japanese workshop on diamond power devices, Jan 2019, Aussois, France. ⟨hal-03578171⟩
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2015

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Audrey Valentin, André Tardieu, Vianney Mille, Alexandre Tallaire, Jocelyn Achard, et al.. Polarization effect on Time-of-Flight measurements performed on CVD diamond monocrystals. SBDD XX, Feb 2015, Hasselt, Belgium. ⟨hal-03578201⟩
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2009

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Audrey Valentin, S. Galdin-Retailleau, P. Dollfus. Sequential Transport in a Two-Dot Device. 2009 13th International Workshop on Computational Electronics (IWCE 2009), May 2009, Beijing, France. pp.1-4, ⟨10.1109/IWCE.2009.5091148⟩. ⟨hal-03440075⟩
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2008

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Audrey Valentin, J. See, S. Galdin-Retailleau, P. Dollfus. Electron/phonon interaction in silicon quantum dots. 2008 9th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2008, Udine, Italy. pp.57-60, ⟨10.1109/ULIS.2008.4527140⟩. ⟨hal-03440071⟩
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Poster de conférence

2020

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Audrey Valentin, Ovidiu Brinza, Samir Farhat, Fabien Bénédic. 2D Monte-Carlo simulation of diamond. Surface and Bulk Defects in Diamond ( SBDD ) XXV, Mar 2020, Hasselt, Belgium. ⟨hal-03578178⟩
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https://hal-cnrs.archives-ouvertes.fr/hal-03578178/file/PosterHasselt2020.pdf BibTex

2018

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Audrey Valentin, Mary de Feudis, Ovidiu Brinza, André Tardieu, Riadh Issaoui, et al.. Characteristics of He ion implanted layers on single-crystal diamond. Surface and Bulk Defects in Diamond ( SBDD ) XXIII, Mar 2018, Hasselt, Belgium. ⟨hal-03578185⟩
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https://hal-cnrs.archives-ouvertes.fr/hal-03578185/file/PosterHasselt2018.pdf BibTex

2016

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Audrey Valentin, A Tallaire, V Mille, L William, M A Pinault-Thaury, et al.. Growth of boron doped CVD diamond on a (113) orientation for power electronic devices. Surface and Bulk Defects in Diamond (SBDD ) XXI, Mar 2016, Hasselt, Belgium. ⟨hal-03578189⟩
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https://hal-cnrs.archives-ouvertes.fr/hal-03578189/file/PosterHasselt2016Final.pdf BibTex

2013

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Audrey Valentin, V Mille, A Tallaire, J Achard, A Gicquel. Mobilities in high-quality CVD diamond crystals evaluated by time-offlight measurements: experimental and simulation results. Surface and Bulk Defects in Diamond ( SBDD ) XVIII, Mar 2013, Hasselt, Belgium. ⟨hal-03578219⟩
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https://hal-cnrs.archives-ouvertes.fr/hal-03578219/file/PosterHasselt2013.pdf BibTex

Thèse

2008

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Audrey Valentin. Modélisation de l'effet tunnel à un électron dans les dispositifs à nanocristaux semiconducteurs : effet tunnel à un électron assisté par phonon. Micro et nanotechnologies/Microélectronique. Université Paris Sud - Paris XI, 2008. Français. ⟨NNT : ⟩. ⟨tel-00350414⟩
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https://theses.hal.science/tel-00350414/file/TheseAV.pdf BibTex

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